David Bour, Chief Technologist, LED Product Technology, Applied Materials, "Epitaxial Nitride Semiconductors for Solid Sate Lighting"
Chip size is growing up from 1mm2 current typical size. Typical pyrolytic MOCVD dep is NH3 rich, with premium on purity. Low pyrolysis of NH3 drives very high NH3 concentration, room for improvement exists. Temperature control is the main knob for growth uniformity. Critical layers are on the order of 3nm thick, can grow in seconds, requires high reactor exchange rates. Mg precursor used for p-doping is difficult to control in production.
Wavelength targeting optimization is a major challenge with respect to reproducibility. Bulk delivery of precursors provides material purity benefits. Defects result in lower light output at given current level. High interest in other substrates. Sapphire is current best known material but SiC and Si are of high interest.
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