Keynote speaker: Nobu Koshiba, president, JSR Corporation: "Materials Innovation: Chemistry for Emerging Technologies"
Opened with discussion on a paradigm shift for CMOS technology: scaling transitioning from optical in the 90's, to materials in the '00's, and now entering the architecture era through 2020;
The new architecture includes Extended CMOS, More-than-Moore, New Applications, Beyond CMOS;
Extended CMOS will pursue higher density and speed using new materials and device structure but still conventional CMOS technology;
More-than-Moore involves fusing sensor, MEMs and other functions on-board with conventional CMOS;
New Applications include Devices and Sensors for Environmental, Energy and Health Care;
Beyond CMOS will move into non-silicon devices, molecular memory, etc
JSR is looking into Liquid, Spin-On Al (with apologies to Ahnold and T2's "liquid metal"); new dielectric materials(SFD-3002), one of JSR's industry mainstays; CNT-based ReRAM technology;
JSR is expecting EUV to take a major role in Semi processing beginning in about 2013, going aginst a lot of other industry predictors; Double Patterning will bookend the introduction of EUV, extending EUV much as it is doing for ArF; "Chemical Freezing" technique may come into play in the near term to fill the gap before EUV matures enough to enter mainstream manufacturing;; long-term projects include Nano-imprinting, which is showing good potential if EUV continues to push out and/or once EUV hits its own limit, and self-assembly for pattern formation; 3-D technology featuring TSV's will be needed to jump the technology improvement track otherwise being followed by further optimization of current IC technologies, JSR is looking into adhesive materials for potential in TSV processing; Phot-definable Dielectric Materials is still one of JSR's long-term projects;
Analog device technologies are expected to push the need for new materials;
Colaboration with customer is a key part of JSR's success strategy
No comments:
Post a Comment