"Emerging Memory Technologies" SMC Presentation Summary - James Hutchby, SRC

James Hutchby, Senior Scientist, Semiconductor Research Corporation, addressed “Emerging Memory Technologies – Scaling Beyond16nm?”. Reduction of the number of charges available to control for Memory was described as the limiting performance issue for current technologies. Because of this new approaches are being developed. One example was a change in device architecture, moving into the 3rd dimension in order to keep pace with Moore’s law. Bit Cell Scaled Structure (BITS) from Toshiba takes on the 3rd dimension as one example. Other emerging technologies were discussed including Ferroelectric Gate FET, Nanomechanical RAM, Spin Transfer Torque MRAM, Phase Change Memory, Themochemical Mechanism devices, Redox Resistive RAM, and others. The target is to focus on a few of the leading candidates to accelerate the introduction into mainstream IC markets, echoing Paolo Gargini’s earlier request, looking for a turnaround time of 5 – 10 years for new technologies below 16nm. An overview of the most promising technologies was presentedpproviding pros and cons for each. The overall conclusions being that early favorites are Spin Transfer Torque RAM (STT-RAM) and Redox RAM.
Posted by Allan Wieesnoski to Techcet's Electronic Materials Information: Conference Site at January 12, 2011 9:23:00 AM PST