Johannes Kaeppeler, Vice President, Technology, Aixtron AG: "MOCVD of III / V Semiconductor – From Material Research to an Established Production Technology"
Aixtron has wide range of deposition equipment & technologies extending to carbon nanotube formation systems. Major revenue-generating product ( > 90%) is used for MOCVD of LEDs. Reactor design strategy features multiple layer growth within a single chamber. 15um/hor dep rate of GaN effective limit currently. 6" is maximum substrate size at this time. Total dep time for overall device can reach 8 hours, limits effectiveness of automation for cost reduction. Move to larger substrates & batch sizes in progress. Lack of industry roadmaps impacts ability to justify R&D ROI etc. Market is lagging Semi by about 10 years in terms of overall maturity. III-V development for GaAs solar PV also in production. Latest efforts directed towards III-V silicon devices. Future will include evaluation of in-line process toolset.
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