Keynote speaker: Gary Patton, Vice President, Semiconductor Research & Development Center, IBM Systems and Technology: "Semiconductor Technology - Trends, Challenges, and Opportunities"
Gary began by echoing the end of traditional CMOS scaling as a major factor going forward; Materials & Process innovation are key to progress; collaborative R&D is absolutely necessary; Atomic Level Processes are now required to continue pace of conventional CMOS improvements; atomic purity now a critical factor; collaboration must include entire ecosystem of Semi industry players;
On the Process/Material Innovation Roadmap IBM is pursuing: 3rd and 4th generation of ArF Immersion patterning through 2014, with EUV coming into play by 2016/11nm (with a hedge towards advance Double Patterning vs. EUV); Double patterning will continue to present significant challenges including many requiring new materials; Device Structure Research for CMOS below 22nm includes FinFets down to 11nm, followed by fully-Depleted Devices, Si-nano-wire, and C-Electronics to get to 3nm; materials purity demands will continue as a primary focus; Interconnect Challenges will require new cap layer materials as well as for liners & seeds; Ever-present demand for "New Ultra-Low-K materials" continues; ; efforts on IBM's Packaging Research Roadmap focus on 3D Integration with stacking & TSV's; need advanced final passivation materials; high performance pastes for thermal interfaces
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